期刊全名
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
最新影响因子
1.9年均收录文章
274期刊简称
SEMICOND SCI TECH来源地区
ENGLAND详细类别
MATERIALS SCIENCE
MULTIDISCIPLINARY材料科学：综合
3区
PHYSICS
CONDENSED MATTER物理：凝聚态物理
3区
ENGINEERING
ELECTRICAL & ELECTRONIC工程：电子与电气
3区
中科院杂志分区
工程技术(2区)是否OA开放访问
No投稿难度
容易出版周期
Monthly投稿链接
点击投稿杂志主页
点击查看杂志主页自引率
4.70%类别
工程技术-材料科学：综合coverage
Science Citation Index审稿周期
一般,3-6周SEMICONDUCTOR SCIENCE AND TECHNOLOGY是一本专注于半导体科学与技术领域的国际学术期刊，ISSN号为0268-1242，由英国物理学会出版社（IOP Publishing）出版，出版地为英国，出版周期为月刊。该期刊的影响因子较高，属于SCI收录期刊，并在中科院分区中通常被列为工程技术类的高水平期刊，但具体分区需根据年度更新确认。期刊为非开放获取（非OA）模式。其发文特点涵盖半导体材料、器件物理、工艺技术及应用研究，尤其关注新型半导体材料、纳米结构、光电器件和集成电路等前沿领域。杂志以高质量的原创研究和综述文章为主，审稿严格，学术声誉良好，但投稿竞争较激烈，拒稿率较高，适合具有创新性和技术深度的研究成果投稿。
Enhancing large area PERC solar cell efficiency through optimized additive-assisted silicon wafer texturization
2025-08-01T22:49:06Z
Low-temperature-annealed ultralow Ohmic contact to AlGaN/GaN heterostructures using non-recessed and recessed electrode structures
2025-07-22T22:51:07Z
High-Performance Lateral Enhancement-Mode β-Ga<sub>2</sub>O<sub>3</sub> MOSFET with a Novel Superjunction-Extended Gate Structure
2025-07-31T22:49:31Z
Investigation of diamond/Ga<sub>2</sub>O<sub>3</sub> and diamond/GaN hetero-p–n junctions using mechanical grafting
2025-07-21T22:52:06Z
First demonstration of rapid deuterium annealing for interface trap reduction in HKMG MOSFETs
2025-07-16T22:51:07Z
Infrared extinction in heavily doped CdTe:Cr single crystals at room temperature
2025-07-15T22:50:46Z
Large area x-ray rocking curve mapping technique utilizing a wide beam of BL09 at SAGA Light Source
2025-07-17T22:52:58Z
Advanced trench junction barrier Schottky integrated SiC trench MOSFET with improved switching oscillation suppression
2025-07-16T22:51:01Z
Experimental evidence for passivating the surface dangling bonds to alleviate the Fermi-level pinning in metal-semiconductor contacts
2025-07-16T22:50:51Z
A hybrid machine learning model to predict reconfigurable field-effect transistor characteristics with limited dataset
2025-06-25T06:47:36Z
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique
2025-07-17T22:52:48Z
A novel four-terminal SiC MOSFET with improved single-event effect performance
2025-07-10T09:22:16Z
Recent advances in GaN-based semiconductor lasers
2025-06-25T18:49:23Z
A novel V-grooved vertical GaN-based HEMT on silicon utilizing 2DEG for enhanced performance
2025-07-03T18:50:16Z
Structural and optical evolution of compressively strained Ge<sub>0.965</sub>Sn<sub>0.035</sub> films on silicon undergoing microwave annealing
2025-06-25T18:49:26Z
A high-speed avalanche photodiode with large coupling tolerance
2025-06-20T18:49:26Z
High on/off ratio niobium-based RRAM with multi-level switching through process condition variations
2025-06-05T22:51:17Z
Wafer scale assessment of dislocation defects on SiC wafers using a convolutional neural network
2025-06-16T22:51:35Z
